Semiconductors

: (1498) products
Image
Product code
Description
Datasheet
Manufacturer
Manufacturer code
Stock
Price
QTY
Zener Diode 1N4749A, 24V/1W, DO-41Image of Zener Diode 1N4749A, 24V/1W, DO-41
079140

Zener Diode 1N4749A, 24V/1W, DO-41


Iz: 10.5 mA;
Forward Voltage Vf Max: 1.2 V;
Vz: 24 V;
Power: 1 W;
Number of Pins: 2;
Body Diameter: 2.8 mm;
Case Style: DO-41;
Mounting: Axial leads;
Zener Diode 1N4749A, 24V/1W, DO-41 - pdf
432.61 KB
DC COMPONENTS
1N4749A
68
pc
1+ 0.2000 BGN
20+ 0.1400 BGN
50+ 0.1000 BGN
100+ 0.0800 BGN
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ZEner Diode 1N4764, 100V/1W, DO-41Image of ZEner Diode 1N4764, 100V/1W, DO-41
079155

ZEner Diode 1N4764, 100V/1W, DO-41


Iz: 2.5 mA;
Forward Voltage Vf Max: 1.2 V;
Vz: 100 V;
Power: 1 W;
Number of Pins: 2;
Body Diameter: 2.8 mm;
Case Style: DO-41;
Mounting: Axial leads;
ZEner Diode 1N4764, 100V/1W, DO-41 - pdf
445.31 KB
SEMTECH
1N4764A
> 1000
pc
1+ 0.2000 BGN
20+ 0.1400 BGN
50+ 0.1000 BGN
100+ 0.0800 BGN
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Zener Diode 1N5237, 8.2V/0.5W, DO-35Image of Zener Diode 1N5237, 8.2V/0.5W, DO-35
079175

Zener Diode 1N5237, 8.2V/0.5W, DO-35


Iz: 20 mA;
Vz: 8.2 V;
Power: 0.5 W;
Number of Pins: 2;
Body Diameter: 2 mm;
Case Style: DO-35;
Mounting: Axial leads;
Zener Diode 1N5237, 8.2V/0.5W, DO-35 - pdf
441.16 KB
MOTOROLA
1N5237B
137
pc
1+ 0.1500 BGN
20+ 0.1000 BGN
50+ 0.0700 BGN
100+ 0.0540 BGN
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Rectifier Diode 1N5408, 3A/1000V, DO-27Image of Rectifier Diode 1N5408, 3A/1000V, DO-27
078237

Rectifier Diode 1N5408, 3A/1000V, DO-27


Forward Current If /AV/: 3 A;
Forward Voltage Vf Max: 1 V;
Repetitive Reverse Voltage Vrrm Max: 1000 V;
Number of Pins: 2;
Body Diameter: 5 mm;
Case Style: DO-27;
Mounting: Axial leads;
Rectifier Diode 1N5408, 3A/1000V, DO-27 - pdf
45.91 KB
MIC
1N5408
> 1000
pc
1+ 0.2200 BGN
20+ 0.1700 BGN
50+ 0.1400 BGN
100+ 0.1200 BGN
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Schottky Diode 1N5819, 1A/40V, DO-41Image of Schottky Diode 1N5819, 1A/40V, DO-41
078249

Schottky Diode 1N5819, 1A/40V, DO-41


Forward Current If /AV/: 1 A;
Repetitive Reverse Voltage Vrrm Max: 40 V;
Number of Pins: 2;
Case Style: DO-41;
Mounting: Axial leads;
 
MDD SEMICONDUCTOR
1N5819
> 1000
pc
1+ 0.1200 BGN
20+ 0.0700 BGN
50+ 0.0500 BGN
100+ 0.0400 BGN
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Schottky Diodes 1N5819, 1A/40V, SMAImage of Schottky Diodes 1N5819, 1A/40V, SMA
078248

Schottky Diodes 1N5819, 1A/40V, SMA


Forward Current If /AV/: 1 A;
Forward Voltage Vf Max: 600 mV;
Repetitive Reverse Voltage Vrrm Max: 40 V;
Number of Pins: 2;
Case Style: SMA;
Schottky Diodes 1N5819, 1A/40V, SMA - pdf
405.33 KB
MIC
1N5819SF
0
pc
1+ 0.1500 BGN
20+ 0.1000 BGN
50+ 0.0800 BGN
100+ 0.0670 BGN
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Schottky Diode 1N5822, MIC, 3A/40V, DO-201ADImage of Schottky Diode 1N5822, MIC, 3A/40V, DO-201AD
078253

Schottky Diode 1N5822, MIC, 3A/40V, DO-201AD


Forward Current If /AV/: 3 A;
Repetitive Reverse Voltage Vrrm Max: 40 V;
Power: 3.6 W;
Number of Pins: 2;
Body Diameter: 5.6 mm;
Case Style: DO-201AD;
Mounting: Axial leads;
 
MIC
1N5822
74
pc
1+ 0.2800 BGN
10+ 0.2300 BGN
20+ 0.1900 BGN
50+ 0.1600 BGN
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Schottky Diode 1N5822, YAN, 3A/40V, DO-201ADImage of Schottky Diode 1N5822, YAN, 3A/40V, DO-201AD
078254

Schottky Diode 1N5822, YAN, 3A/40V, DO-201AD


Forward Current If /AV/: 3 A;
Repetitive Reverse Voltage Vrrm Max: 40 V;
Operating Temperature Max: 150°C;
Operating Temperature Min: -55°C;
Number of Pins: 2;
Body Diameter: 5.6 mm;
Case Style: DO-201AD;
Mounting: Axial leads;
Schottky Diode 1N5822, YAN, 3A/40V, DO-201AD - pdf
180.38 KB
YANGJIE ELECTRONIC TECHNOLOGY
1N5822
508
pc
1+ 0.2800 BGN
10+ 0.2300 BGN
20+ 0.1900 BGN
50+ 0.1600 BGN
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Voltage regulator 1PH723B, CAN-10Image of Voltage regulator 1PH723B, CAN-10
039206

Voltage regulator 1PH723B, CAN-10


Description: Adjustable;
Supply Voltage Min: 12V;
Supply Voltage Max: 40V;
 
ZPP BULGARIA
1PH423B
> 200
pc
1+ 0.5000 BGN
Operational Amplifier 1УО741, DIP-8Image of Operational Amplifier 1УО741, DIP-8
039220

Operational Amplifier 1УО741, DIP-8


Description: Operational Amplifier;
 
1УО741
> 200
pc
1+ 0.4000 BGN
24C01, EEPROM, PDIP-8Image of 24C01, EEPROM, PDIP-8
050202

24C01, EEPROM, PDIP-8


 
24C01, EEPROM, PDIP-8 - pdf
161.12 KB
ATMEL
24C01
> 100
pc
1+ 0.6800 BGN
24C02, EEPROM, PDIP-8Image of 24C02, EEPROM, PDIP-8
050204

24C02, EEPROM, PDIP-8


 
24C02, EEPROM, PDIP-8 - pdf
292.83 KB
ATMEL
24C02
> 100
pc
1+ 0.5000 BGN
24C32AN, EEPROM, SOIC-8 /SMD/Image of 24C32AN, EEPROM, SOIC-8 /SMD/
050212

24C32AN, EEPROM, SOIC-8 /SMD/


 
24C32AN, EEPROM, SOIC-8 /SMD/ - pdf
309.16 KB
ATMEL
24C32AN
> 100
pc
1+ 0.8600 BGN
24C64AN, EEPROM, PDIP-8Image of 24C64AN, EEPROM, PDIP-8
050215

24C64AN, EEPROM, PDIP-8


 
24C64AN, EEPROM, PDIP-8 - pdf
688.15 KB
ATMEL
24C64AN
> 100
pc
1+ 0.9000 BGN
24LC32A-I/PG, EEPROM, DIP-8Image of 24LC32A-I/PG, EEPROM, DIP-8
050214

24LC32A-I/PG, EEPROM, DIP-8


 
24LC32A-I/PG, EEPROM, DIP-8 - pdf
1.27 MB
MICROCHIP
24LC32A-I/PG
9
pc
1+ 1.70 BGN
5+ 1.52 BGN
10+ 1.36 BGN
25+ 0.1245 BGN
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Transistor 2N2222A, NPN, TO-92Image of Transistor 2N2222A, NPN, TO-92
067022

Transistor 2N2222A, NPN, TO-92


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 75 V;
Ucbo: 40 V;
Ic /Max/: 0.6 A;
Frequency: 250 MHz;
Gain /Min hFE/: 300;
Power: 0.625 W;
Number of Pins: 3;
Case Style: TO-92;
Transistor 2N2222A, NPN, TO-92 - pdf
153.38 KB
DIOTEC SEMICONDUCTOR
2N2222A
617
pc
1+ 0.1400 BGN
10+ 0.0900 BGN
25+ 0.0700 BGN
50+ 0.0570 BGN
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Transistor 2N2907A, PNP, TO-92Image of Transistor 2N2907A, PNP, TO-92
067042

Transistor 2N2907A, PNP, TO-92


Type: Bipolar;
Polarity: PNP;
Uceo /Max/: -60 V;
Ucbo: -60 V;
Ic /Max/: -600 mA;
Frequency: 250 MHz;
Gain /Min hFE/: 200;
Power: 625 mW;
Operating Temperature Min: -55°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor 2N2907A, PNP, TO-92 - pdf
153.42 KB
DIOTEC SEMICONDUCTOR
2N2907A
> 100
pc
1+ 0.1600 BGN
10+ 0.1100 BGN
20+ 0.0800 BGN
50+ 0.0640 BGN
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Transistor 2N3055, NPN, TO-204AA (TO-3)Image of Transistor 2N3055, NPN, TO-204AA (TO-3)
067046

Transistor 2N3055, NPN, TO-204AA (TO-3)


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 60 V;
Ucbo: 100 V;
Ic /Max/: 15 A;
Frequency: 2.5 MHz;
Gain /Min hFE/: 20;
Power: 115 W;
Operating Temperature Min: -65°C;
Operating Temperature Max: 200°C;
Number of Pins: 2;
Case Style: TO-3;
Transistor 2N3055, NPN, TO-204AA (TO-3) - pdf
119.45 KB
CDIL
2N3055
21
pc
1+ 3.20 BGN
5+ 2.78 BGN
10+ 2.49 BGN
25+ 2.07 BGN
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Transistor 2N3055HV, NPN, TO-204AA (TO-3)Image of Transistor 2N3055HV, NPN, TO-204AA (TO-3)
067047

Transistor 2N3055HV, NPN, TO-204AA (TO-3)


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 100 V;
Ucbo: 100 V;
Ic /Max/: 15 A;
Frequency: 2.5 MHz;
Gain /Min hFE/: 20;
Power: 100 W;
Operating Temperature Min: -65°C;
Operating Temperature Max: 200°C;
Number of Pins: 2;
Case Style: TO-3;
Transistor 2N3055HV, NPN, TO-204AA (TO-3) - pdf
240.44 KB
CDIL
2N3055HV
29
pc
1+ 3.30 BGN
5+ 2.86 BGN
10+ 2.56 BGN
25+ 2.13 BGN
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Transistor 2N3772G, NPN, TO-204AA (TO-3)Image of Transistor 2N3772G, NPN, TO-204AA (TO-3)
067052

Transistor 2N3772G, NPN, TO-204AA (TO-3)


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 60 V;
Ucbo: 100 V;
Ic /Max/: 20 A;
Gain /Min hFE/: 40;
Power: 150 W;
Operating Temperature Min: -65°C;
Operating Temperature Max: 200°C;
Number of Pins: 2;
Case Style: TO-3;
Transistor 2N3772G, NPN, TO-204AA (TO-3) - pdf
85.98 KB
ON SEMICONDUCTOR
2N3772G
18
pc
1+ 6.95 BGN
Transistor 2N3773G, NPN, TO-204AA (TO-3)Image of Transistor 2N3773G, NPN, TO-204AA (TO-3)
067053

Transistor 2N3773G, NPN, TO-204AA (TO-3)


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 140 V;
Ucbo: 160 V;
Ic /Max/: 16 A;
Gain /Min hFE/: 40;
Power: 150 W;
Operating Temperature Min: -65°C;
Operating Temperature Max: 200°C;
Number of Pins: 2;
Case Style: TO-3;
Transistor 2N3773G, NPN, TO-204AA (TO-3) - pdf
119.76 KB
ON SEMICONDUCTOR
2N3773G
> 100
pc
1+ 7.60 BGN
Transistor 2N3904, NPN, TO-92Image of Transistor 2N3904, NPN, TO-92
067055

Transistor 2N3904, NPN, TO-92


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 40 V;
Ucbo: 60 V;
Ic /Max/: 0.2 A;
Frequency: 300 MHz;
Gain /Min hFE/: 100;
Power: 0.625 W;
Number of Pins: 3;
Case Style: TO-92;
 
MOTOROLA
2N3904
765
pc
1+ 0.1000 BGN
Transistor 2N5401, PNP, TO-92Image of Transistor 2N5401, PNP, TO-92
067070

Transistor 2N5401, PNP, TO-92


Type: Bipolar;
Polarity: PNP;
Uceo /Max/: 150 V;
Ucbo: 160 V;
Ic /Max/: 0.2 A;
Frequency: 300 MHz;
Gain /Min hFE/: 50;
Power: 0.625 W;
Operating Temperature Min: -55°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor 2N5401, PNP, TO-92 - pdf
82.9 KB
NATIONAL SEMICONDUCTOR
2N5401
472
pc
1+ 0.1100 BGN
Transistor 2N5551, NPN, TO-92Image of Transistor 2N5551, NPN, TO-92
067093

Transistor 2N5551, NPN, TO-92


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 160 V;
Ucbo: 180 V;
Ic /Max/: 0.6 A;
Frequency: 300 MHz;
Gain /Min hFE/: 80;
Power: 0.625 W;
Operating Temperature Min: -55°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor 2N5551, NPN, TO-92 - pdf
137.39 KB
DIOTEC SEMICONDUCTOR
2N5551
1641
pc
1+ 0.1200 BGN
10+ 0.0900 BGN
20+ 0.0700 BGN
50+ 0.0590 BGN
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Transistor 2N7000, N-FET, TO-92Image of Transistor 2N7000, N-FET, TO-92
067110

Transistor 2N7000, N-FET, TO-92


Type: MOSFET;
Polarity: N-channel;
Uds /Max/: 60 V;
Id /Max/: 0.2 A;
Power: 0.35 W;
Operating Temperature Min: -55°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor 2N7000, N-FET, TO-92 - pdf
136.62 KB
DIOTEC SEMICONDUCTOR
2N7000
764
pc
1+ 0.2000 BGN
10+ 0.1600 BGN
25+ 0.1300 BGN
50+ 0.1056 BGN
view more



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